| AVS 59th Annual International Symposium and Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Film Poster Session |
| Presenter: | B. Hagenhoff, Tascon GmbH, Germany |
| Authors: | B. Hagenhoff, Tascon GmbH, Germany M. Fartmann, Tascon GmbH, Germany D. Breitenstein, Tascon GmbH, Germany T. Grehl, ION-TOF GmbH, Germany H.R.J. ter Veen, Tascon GmbH, Germany |
| Correspondent: | Click to Email |
When growing thin layers – through ALD or other processes – it is important to know how the layer is growing. Low Energy Ion Scattering (LEIS) can play a pivota role in the study of film growth. It can be used for a quantitative analysis of the outermost atomic layer. This feature is used to determine layer closure or the existence of pinholes.
At the same time, LEIS gives information about the composition below the surface (similar to RBS). This so called "static depth profiling" can be used to monitor and study the evolution of layer thickness.
Examples will be shown for ALD Ta layers on Si, demonstrating the capabilities of LEIS to determine layer closure and the development of the layer thickness in the ALD process, also at low cycle numbers.
A Diamond Like Carbon (DLC) on Si system will be shown to demonstrate the possibilities to combine static depth profiling with dynamic (sputter) depth profiling, combining the advantages of both techniques and overcoming their drawbacks.