AVS 59th Annual International Symposium and Exhibition
    Thin Film Thursday Sessions
       Session TF+NS+EM-ThM

Invited Paper TF+NS+EM-ThM3
Thin Film Growth: From Gas Phase to Solid Phase – Links and Control

Thursday, November 1, 2012, 8:40 am, Room 11

Session: Thin Films: Growth and Characterization-II
Presenter: P. Raynaud, CNRS and University Paul Sabatier – Toulouse – France
Correspondent: Click to Email
PECVD, PVD, ALD, sputtering processes, are widely used for thin film growth.Nevertheless, the growth mechanisms need to be controlled and understood to be able to propose stable, adaptable and reproducible processes.Gas, plasma or ”volume” phase is one parameter; interaction with surfaces to be treated is the second one, the last one being the final property (ies) to be reached.The Gas phase is controlled by external parameters (pressure, power, polarization, temperature, gas mixture, type of power supply in plasma processes, type of target, duty cycle,). Moreover, these external parameters are linked to internal parameters such as: density and energy of species, type of species (neutrals, ions, electrons, radicals, photons …), temperature, bombardment energy…Thus, interaction with surfaces and growth process (growth mode, growth rate…) are obviously controlled by these internal parameters and the couple “Gas phase/surface (nature of substrate)”.The purpose of this talk is to explain through examples (In situ Infrared spectroscopy of gas phase, OES, MS, Growth modes characterization by in situ ellipsometry, RBS, ARXPS…) how to characterize (in or ex situ) the gas phase et solid phase to find links between these two phases and give some explanation of the processes “from power supply to final properties of the layer”.