AVS 59th Annual International Symposium and Exhibition
    Advanced Surface Engineering Tuesday Sessions
       Session SE-TuP

Paper SE-TuP2
Deposition of Hard SiOC(− H) Films by Atmospheric Pressure Plasma Enhanced CVD Method

Tuesday, October 30, 2012, 6:00 pm, Room Central Hall

Session: Advanced Surface Engineering Poster Session
Presenter: M. Noborisaka, Keio University, Japan
Authors: M. Noborisaka, Keio University, Japan
R. Horikoshi, Keio University, Japan
A. Shirakura, Keio University, Japan
T. Suzuki, Keio University, Japan
Correspondent: Click to Email
Atmospheric pressure-plasma enhanced CVD method is a cost-effective process which has been widely developed because we do not have to vacuum during the deposition of thin films. In this study, SiOC(−H) films were synthesized by atmospheric pressure-plasma enhanced CVD method from tetramethoxysilane (TMOS) and O2 diluted with N2. The deposited films were characterized by Fourier-transform infrared spectroscopy, nano-indentation technique, transmission electron microscopy and ellipsometry. The partially crystalline phase of silica was found in the deposited films. The nano-hardness of the films increased from 4.0 GPa to 6.9 GPa as the substrate temperature increased from 80°C to 300°C. The hardness slightly increased up to 4.5 GPa from 4.0 GPa by decreasing the TMOS flow rate at the substrate temperature of 80°C. The results suggested that increase in the relative ratio of Si−O−Si bonding in the network structure to Si−O−Si bonding in the cage structure led to increase in hardness.