Scatterometry is one of the most useful metrology methods for the characterization and control of critical dimensions (CD) during nanoelectronic manufacturing. Most Scatterometry is based on Spectroscopic Ellipsometry (SE) and Normal Incidence Reflectometry (NI) measurement and the simulation of the measured spectra through the Rigorous Coupled Wave Approximation. Evolution of better optical hardware and faster computing capabilities led to the development of Mueller Matrix (MM) based Scatterometry (MMS). Typically, spectroscopic ellipsometry based Scatterometry uses Y the D measured at each wavelength. In this presentation we discuss dimensional metrology using full Mueller Matrix (16 element) Scatterometry in the wavelength range of 245nm-1000nm measured using a dual rotating compensator spectroscopic ellipsometer. Unlike SE and NI, MM data provides complete information about the optical reflection and transmission of polarized light through a sample. The advantage of MMSE over traditional SE Scatterometry is its ability to measure samples that have anisotropic optical properties and depolarize light. We demonstrate this using a series of structures fabricated by e-beam lithography.