Nanoelectromechanical systems (NEMS) have been shown to be far more sensitive than microelectromechanical systems (MEMS). However, their smaller size also reduces the surface area of the device. This is problematic when scaling gas- and mass-sensing MEMS to the nanoscale regime because it reduces the area for analyte adsorption. Nanostructured thin films grown by glancing angle deposition (GLAD) provide a potential solution to this issue. GLAD thin films, deposited by evaporation at highly oblique angles between the source and the substrate, have extremely high surface area which can be used to counteract the decreased surface area of NEMS. The low density of GLAD films permits the increase in surface area without adding significant mass. Successful surface functionalization of GLAD films has also been demonstrated. These factors indicate that GLAD films are promising candidates for NEMS sensor applications. A major drawback, however, is that GLAD films are very difficult to pattern using lithography because they are incompatible with the wet processes required for photoresist development and removal. We have devised an alternative process that requires no lithographic patterning of the GLAD by depositing the films on patterned and released NEMS doubly clamped beams. The NEMS are fabricated from silicon-on-insulator wafers by etching away the oxide layer to give released silicon NEMS. Silicon dioxide GLAD films are then deposited. The GLAD films show good uniformity and limited edge effects. These GLAD-coated NEMS, or GLEMS, show significant potential for sensing applications. There are many parameters available for future optimization, including beam dimensions and GLAD film deposition parameters.