AVS 59th Annual International Symposium and Exhibition
    In Situ Microscopy and Spectroscopy Focus Topic Wednesday Sessions
       Session IS+AS+OX+ET-WeM

Invited Paper IS+AS+OX+ET-WeM3
In Situ Synchrotron X-Ray Studies of Epitaxial Oxide Thin Film Synthesis Behavior

Wednesday, October 31, 2012, 8:40 am, Room 007

Session: In Situ Characterization of Solids: Film Growth, Defects, and Interfaces
Presenter: J.A. Eastman, Argonne National Laboratory
Authors: J.A. Eastman, Argonne National Laboratory
M.J. Highland, Argonne National Laboratory
P.H. Fuoss, Argonne National Laboratory
T.M. McCleskey, Los Alamos National Laboratory
D.D. Fong, Argonne National Laboratory
C.M. Folkman, Argonne National Laboratory
S.K. Keun, Argonne National Laboratory
E. Perret, Argonne National Laboratory
P.M. Baldo, Argonne National Laboratory
E. Bauer, Los Alamos National Laboratory
Q. Jia, Los Alamos National Laboratory
Correspondent: Click to Email

Intense interest is focused on the growth science of epitaxial oxide thin films because of continuing discoveries of new interesting and important properties. The key to achieving desired maximum functionality of oxide heterostructures is the ability to synthesize high-quality films with full control of factors such as composition, crystallographic orientation, surface termination, and strain state. Many of the most promising thin film synthesis techniques involve non-vacuum, high-temperature environmental conditions that are difficult or impossible to probe using standard spectroscopic or structural probes. However, the use of high-energy x-rays available at synchrotron sources such as the Advanced Photon Source (APS) provides an opportunity to obtain real-time atomic-level structural and chemical information during synthesis. This talk will describe results from recent studies at APS Sector 12ID-D using an in-situ x-ray approach to understand and control the synthesis behavior of complex oxide epitaxial thin films prepared by two very different techniques: sputter deposition or polymer assisted deposition (PAD).
We recently built a new RF magnetron sputter deposition system at the APS, which brings to bear state-of-the-art real-time in-situ x-ray scattering and spectroscopy techniques to provide insight into the growth behavior of epitaxial oxide thin film heterostructures. Initial studies of the growth behavior of epitaxial films such as (001) LaGaO3, SrZrO4, and LaGaO3/SrZrO3 multilayer heterostructures during off-axis sputtering will be described, focusing on the effects of epitaxial strain and electrical compensation (e.g., surface polarity) on growth behavior.
PAD is a solution technique capable of synthesizing dense epitaxial thin films. Past work at Los Alamos has demonstrated that PAD can be used to prepare aligned epitaxial films of many different materials. We recently performed initial in-situ synchrotron x-ray experiments aimed at obtaining a fundamental understanding of the nucleation and growth processes associated with epitaxial film formation. Studies of the synthesis behavior of (001) BaTiO3 epitaxial films will be described in this talk, focusing on the effects of thermal history and choice of substrate material on crystallization behavior and the development of epitaxy.
Argonne researchers were supported by the U. S. Department of Energy (DOE), Basic Energy Sciences (BES), Materials Sciences and Engineering Division. Los Alamos researchers were supported by the DOE through the LANL/LDRD Program. Use of the APS was supported by BES, under Contract DE-AC02-06CH11357 between UChicago Argonne LLC and the Department of Energy.