| AVS 59th Annual International Symposium and Exhibition | |
| Helium Ion Microscopy Focus Topic | Wednesday Sessions |
| Session HI+AS+NS-WeA |
| Session: | Basics of Helium Ion Microscopy |
| Presenter: | E. Van Veldhoven, TNO Technical Sciences, The Netherlands |
| Authors: | E. Van Veldhoven, TNO Technical Sciences, The Netherlands H.H.P.Th. Bekman, TNO Technical Sciences, The Netherlands F.T. Molkenboer, TNO Technical Sciences, The Netherlands N.B. Koster, TNO Technical Sciences, The Netherlands D.J. Maas, TNO Technical Sciences, The Netherlands |
| Correspondent: | Click to Email |
The Helium ion microscope (HIM, Zeiss Orion Plus™) has unique features. This microscope unravels a new application area for imaging sensitive and charging surfaces with (sub) nm resolution [1]. The beam-sample interaction generates secondary electrons with low energy and a low quantity of backscattering ions. These properties are very interesting for using the microscope not just for imaging only, but for nanofabrication too [2]. To explore all the capabilities for nanofabrication, the HIM is equipped with a pattern generator (Raith Elphy Multibeam™) and a gas injection system (Omniprobe Omnigis™) to explore direct write, lithography and gas induced applications.
In this contribution we would like to focus on imaging charging materials and our latest results for using the HIM for developing new applications for mainly the Semiconductor Industry. We consider a few HIM-based methods for TEM sample preparation. It is possible to use the HIM for making a thin wedge without significant artifacts like bubble formation and amorphization. With the gas injection system we develop new recipes for very local deposition and etching. These recipes are used for feasibility studies for mask repair and circuit editing. The helium ion microscope offers a novel way for nanofabrication and imaging on the nm scale.