Paper HI+AS+BI+NS-ThM12
Application of Helium Ion Microscope on Processing and Characterization of Nano Wires
Thursday, November 1, 2012, 11:40 am, Room 19
| Session: |
Imaging and Lithography with the Helium Ion Microscope |
| Presenter: |
H.X. Guo, National Institute for Materials Science (NIMS), Japan |
| Authors: |
H.X. Guo, National Institute for Materials Science (NIMS), Japan
S. Nagano, National Institute for Materials Science (NIMS), Japan
K. Onishi, National Institute for Materials Science (NIMS), Japan
D. Fujita, National Institute for Materials Science (NIMS), Japan
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| Correspondent: |
Click to Email |
Scanning helium ion microscope (SHIM) is advanced in high resolution and high focal depth of secondary electron imaging and Rutherford backscattered ion imaging.[1] It also employed in the nano pattern or fabrication on surface and other various structures, such as 2D materials, graphene.[2] It is an excellent candidate for the naon processing of 1D nano structures, such as nanowires and nanotubes.
Rhenium trioxide (ReO3) is an unusual transition metal oxide with high electrical conductivity close to that of metals. It is well investigated for the applications of photovoltaics[3], catalyst[4],and tip for scanning tunneling microscope[5]. Various ReO3 nano structures such as nano paticles[3,6], nano wires[7], and core-shell structures have been synthesized and characterized by different methods.
In this research, ReO3 nanowires were synthesized by a physical vapor deposition method. Etched by the helium ion beam, the diameter of part of the nanowire was decreased. During this processing, the structure and transport properties of the ReO3 nanowire were modified with a controllable method. In this presentation, we will show the structure and properties characterization of the etched nanowires by using scanning probe microscope (SPM) , transmission electron microscope (TEM) and other methods. An in-situ transport properties measurement system with SHIM will also be introduced in the presentation.
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[2] D. C. Bell, M. C. Lemme, L. A. Stern, J. R. Williams, and C. M. Marcus, Nanotech., 20, 455301(2009).
[3] S. V. Bhat, S. B. Krupanidhi , and C. N. R. Rao, Appl. Phys. Express,3, 115001(2010)
[4] E. Cazzanelli, M. Castriota, S. Marino, N. Scaramuzza, J. Purans, A. Kuzmin, R. Kalendarev, G. Mariotto, and G. Das,; J. Appl. Phys., 105, 114904 (2009)
[5] S. I. Ikebe, D. Shimada,T. Akahane, and N. Tsuda,; Jpn. J. Appl. Phys., 30, L405(1991)
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