AVS 59th Annual International Symposium and Exhibition
    Helium Ion Microscopy Focus Topic Thursday Sessions
       Session HI+AS+BI+NS-ThM

Paper HI+AS+BI+NS-ThM11
High Resolution Patterning of Carbon Nanomembranes and Graphene via Extreme UV Interference Lithography: A Helium Ion Microscopy Study

Thursday, November 1, 2012, 11:20 am, Room 19

Session: Imaging and Lithography with the Helium Ion Microscope
Presenter: A. Winter, University of Bielefeld, Germany
Authors: A. Winter, University of Bielefeld, Germany
A. Willunat, University of Bielefeld, Germany
A. Beyer, University of Bielefeld, Germany
Y. Ekinci, Paul Scherrer Institute, Switzerland
A. Gölzhäuser, University of Bielefeld, Germany
A. Turchanin, University of Bielefeld, Germany
Correspondent: Click to Email
Two-dimensional (2D) carbon materials like graphene, graphene oxide, carbon nanomembranes (CNMs) or ultrathin polymeric films have recently attracted enormous interest due to their potential use in electronics, chemical and biological sensors, nanofilters, hybrid materials, etc. Most of these applications require lithographic patterning of these 2D carbon materials with the nanoscale resolution. In this respect, Extreme UV Interference Lithography (EUV-IL) provides both large-scale pattering and high resolution with an ultimate limit in the sub-10 nm range. We employ EUV-IL to generate nanopatterns in ~1 nm thick CNMs and graphene. We characterise these nanopatterns with a Helium Ion Microscope (HIM). Its high surface sensitivity and lateral resolution provide excellent conditions for imaging of the topographic and chemical features in CNMs and graphene. The possibility to routinely fabricate and characterize the nanopatterns via EUV-IL and HIM on various technologically relevant insulating substrates (e.g., oxidized silicon wafers, glass, and quartz) and with the resolution below 20 nm shows high potential of both techniques for applications in carbon-based nanotechnology.