AVS 58th Annual International Symposium and Exhibition
    Plasma Science and Technology Division Tuesday Sessions

Session PS1-TuA
Advanced BEOL / Interconnect Etching II

Tuesday, November 1, 2011, 2:00 pm, Room 202
Moderator: Saravanapriyan Sriraman, Lam Research Corp.


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:00pm PS1-TuA1
Feature Profile Evolution for HARC Etching in SiO2
Paul Moroz, Tokyo Electron US Holdings Ltd., S.-Y. Kang, Tokyo Electron Ltd., Japan
2:20pm PS1-TuA2 Invited Paper
Hybrid Strip Process to Minimize Low-k Dielectric Damage
Eric A. Hudson, T. Choi, K. Takeshita, S. Sirard, B. Ji, M. Kato, M. Moravej, O. Turmel, G.A. Delgadino, S. Heo, A.D. Bailey III, Lam Research Corp.
3:00pm PS1-TuA4
Model for High Aspect Ratio Dielectric Etch Process in a Capacitively-Coupled Plasma
Jason Kenney, A. Balakrishna, A. Agarwal, N. Misra, S. Rauf, K. Collins, Applied Materials, Inc.
4:00pm PS1-TuA7
Plasma-induced Damage Reduction in Porous SiOCH Dielectrics by Replacement of H2 and N2 by CH2F2 and Ar in Fluorocarbon Based Plasmas
Laurent Souriau, F. Lazzarino, L. Carbonell, I. Ciofi, P. Verdonck, J.F. de Marneffe, M. Baklanov, IMEC, Belgium
4:20pm PS1-TuA8
Using Pulsed Power to Control Etch Properties of SiO2 in Ar/CF4/O2Capacitively Coupled Plasmas
Sang-Heon Song, M.J. Kushner, University of Michigan
4:40pm PS1-TuA9
Chemical Mechanisms for Dielectric Product Development
Ajit Balakrishna, A. Agarwal, J.A. Kenney, S. Belostotskiy, S. Rauf, K. Collins, Applied Materials, Inc.
5:00pm PS1-TuA10
Optimization of CF3I Process for Low-K Etching
A.J. Gildea, J.C. Long, E. Eisenbraun, College of Nanoscale Science and Engineering, the University at Albany-SUNY, Vincent Omarjee, F. Doniat, N. Stafford, C. Dussarrat, American Air Liquide – Delaware Research and Technology Center
5:20pm PS1-TuA11
Mechanism of Highly Selective SiO2 Etching over Si3N4, Si and Photoresist Using Hydro-Fluorocarbon Gases
Y. Miyawaki, Y. Kondo, K. Asano, Makoto Sekine, K. Ishikawa, T. Hayashi, K. Takeda, H. Kondo, M. Hori, Nagoya University, Japan