AVS 58th Annual International Symposium and Exhibition
    Plasma Science and Technology Division Tuesday Sessions
       Session PS+MN+TF-TuM

Invited Paper PS+MN+TF-TuM9
Challenges in Plasma Etch for NVM: Scaling and Materials

Tuesday, November 1, 2011, 10:40 am, Room 202

Session: Plasma Processing for Disruptive Technologies
Presenter: Mark Kiehlbauch, Micron Technology, Inc.
Correspondent: Click to Email
With advances in non-volatile memory, the major challenge confronting plasma etch is the introduction of new materials while simultaneously shrinking critical dimensions. This talk will address key development aspects including profile control, feature level uniformity, and plasma microdamage. Plasma microdamage is not the traditional, charge/voltage/current based impact to, for example, gate oxides. Rather, it is the changes to the atomic scale morphology in the sidewall or landing film of a plasma etch process. This results in a disruption of local stoichiometry, film defects, and other issues that impact device performance. The etch process and hardware changes to address this will be presented.