AVS 58th Annual International Symposium and Exhibition
    Nanomanufacturing Science and Technology Focus Topic Tuesday Sessions
       Session NM-TuP

Paper NM-TuP8
Fabrication of Single-Electron Transistor Utilizing Multi-Coated Self-Assembled Monolayer

Tuesday, November 1, 2011, 6:00 pm, Room East Exhibit Hall

Session: Nanomanufacturing Science and Technology Poster Session
Presenter: Namyong Kwon, Sungkyunkwan Univ., Republic of Korea
Authors: N. Kwon, Sungkyunkwan Univ., Republic of Korea
K. Kim, Sungkyunkwan Univ., Republic of Korea
I. Chung, Sungkyunkwan Univ., Republic of Korea
Correspondent: Click to Email
We have fabricated quantum dots with the precise sizes from 30 nm to sub-10 nm at the controllable position. First, Au electrodes with the unique shape were obtained using a conventional lithography. Then, self-assembled multilayers, composed of alternating layers of α, ω-mercaptoalkanoic acids (~2 nm) and copper (II) ions, were deposited on Au electrode patterns to form the controllable gap between adjacent Au electrodes. After reaching to nanometer-scale gap, the second Au was deposited again. Finally, lift-off both e-beam resist and molecular resist were removed by lift-off, thereby resulting in quantum dot with nano-gap between gold electrodes. The physical properties were analyzed using scanning probe microscopy (SPM) and field emission scanning electron microscopy (FE-SEM). The electrical properties were evaluated using Keithley-4200.