AVS 58th Annual International Symposium and Exhibition
    Nanomanufacturing Science and Technology Focus Topic Tuesday Sessions
       Session NM-TuP

Paper NM-TuP7
Fabrication of Nanopattern Sapphire Substrate by Nanosphere and Nanoimprint Lithography Technology

Tuesday, November 1, 2011, 6:00 pm, Room East Exhibit Hall

Session: Nanomanufacturing Science and Technology Poster Session
Presenter: Chun-Ming Chang, National Applied Research Laboratories, Taiwan, Republic of China
Authors: C.M. Chang, National Applied Research Laboratories, Taiwan, Republic of China
M.H. Shiao, National Applied Research Laboratories, Taiwan, Republic of China
D.Y. Chiang, National Applied Research Laboratories, Taiwan, Republic of China
C.T. Yang, Industrial Technology Research Institute, Taiwan, Republic of China
M.J. Huang, National Applied Research Laboratories, Taiwan, Republic of China
W.J. Hsueh, National Taiwan University, Taiwan, Republic of China
Correspondent: Click to Email
In this study, nanosphere lithography (NSL) and nanoimprint lithography (NIL) methods were used to fabricate metal pit and polymer pillar etching masks for sapphire substrate etching process, respectively. The metal mask contains 500 nm hole array and polymer pillar array mask which each pillar’s size was 350 nm in diameter and height. Then inductively-coupled-plasma reactive ion etching (ICP-RIE) technique was used to etch sapphire substrate, which introduced both boron trichloride (BCl3) and Argon (Ar) mixture etchant gases with 1：6 flow rate ratio. After etching processes were finished, two types of nanopattern structure were obtained on the sapphire substrate surface. One type of sapphire substrate was nano-pit array structure with 400 nm in diameter and 200 nm in depth, another type of sapphire substrate was nano-cone array structure with 400 nm diameter and 100 nm in thickness. The contact angles of two patterned sapphire substrates were measured to be 101.02° and 98.14° for nano-pit array and nano-cone array structure, respectively. From the contact angle measurement results, it can be found that the surface property of sapphire substrate changed from hydrophilic, which contact angle was 24.46°, to be hydrophobic.