| AVS 58th Annual International Symposium and Exhibition | |
| Magnetic Interfaces and Nanostructures Division | Wednesday Sessions |
| Session MI-WeA |
| Session: | Spintronics, Magnetoelectronics, Multiferroics, and Dilute Magnetic Semiconductor Applications |
| Presenter: | Juan Colón Santana, University of Nebraska-Lincoln |
| Authors: | J.A. Colón Santana, University of Nebraska-Lincoln J. An, University of Nebraska-Lincoln N. Wu, University of Nebraska-Lincoln K.D. Belashchenko, University of Nebraska-Lincoln X. Wang, University of Wyoming P. Liu, University of Wyoming J. Tang, University of Wyoming Ya. Losovyj, Center for Advanced Microstructure & Devices I.N. Yakovkin, National Academy of Science of Ukraine P.A. Dowben, University of Nebraska-Lincoln |
| Correspondent: | Click to Email |
High quality films of EuO, Eu0.096Ce0.04O and Eu0.096Gd0.04O were successfully grown on a p-type Si (100) substrate via pulsed laser deposition (PLD). X-ray diffraction (XRD) results show that the addition of Gd changes the growth texture orientation from [001] to [111] with both films crystallizing in the expected rock-salt structure. Angular-resolved photoemission spectroscopy (ARPES) measurements confirms that the doping with Gd atoms have a strong influence in the electronic band structure of these films as well, revealing the presence of electron pockets around some of the high symmetry point in Eu0.096Gd0.04O and Eu0.096Ce0.04O films. There is confirmation of the indirect nature of the EuO electronic band gap suggesting a near semi-metallic character for the Eu0.096Gd0.04O surface. Combined photoemission and inverse photoemission measurements suggests that under some circumstances the surface appears p-type apparent rather than the expected n-type and this unexpected result is likely due to a reconstruction of the highly polar (111) surface. The combination of Gd doping and oxygen vacancies does lead to an appreciable density of states at the Fermi level and is seen to affect the magnetic properties of these films.