| AVS 57th International Symposium & Exhibition | |
| Thin Film | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | TF+EM-WeM1 Invited Paper Moore's Law - From Simple Scaling to Integrating New Materials and Introducing New Device Architectures R. Hendel, Periodic Structures Inc. |
| 8:40am | TF+EM-WeM3 Non-destructive Depth Profiles of Hafnium Silicate Films by Angle-Resolved and Variable-Kinetic Energy XPS C. Weiland, N. Lorenz, R. Opila, University of Delaware |
| 9:20am | TF+EM-WeM5 Study of SiO2 and SiNx Passivation of HfInZnO Oxide Semiconductor Thin Film Transistor J.C. Lee, E.H. Lee, J.G. Chung, B. Anass, J.H. Lee, J.S. Park, M.K. Ryu, Samsung Advanced Institute of Technology, Korea |
| 9:40am | TF+EM-WeM6 Capacitance-Voltage (C-V) and X-ray Photoelectron Spectroscopy (XPS) Study of the Effect of a La2O3 Layer in the TiN/HfO2/SiO2/p-Si Stack E.J. Bersch, M. Di, University at Albany, S.A. Consiglio, R.D. Clark, G.J. Leusink, Tokyo Electron America Inc., A.C. Diebold, University at Albany |
| 10:40am | TF+EM-WeM9 Modification of Defect-State Concentrations with Vacuum Ultraviolet and Ultraviolet Irradiation of Hafnium-Oxide Dielectric Layers H. Ren, University of Wisconsin-Madison, S.-L. Cheng, Y. Nishi, Stanford University, J.L. Shohet, University of Wisconsin-Madison |
| 11:00am | TF+EM-WeM10 Plasma Enhanced Atomic Layer Deposition of Ruthenium Ultra-Thin Films for Advanced Metallization J. Swerts, S. Armini, L. Carbonell, D.A. Annelies, F.A. Alexis, S. Mertens, T. Witters, M. Schaekers, Z. Tökei, G. Beyer, IMEC, Belgium, V. Gravey, A. Cockburn, K. Shah, J. Aubuchon, Applied Materials Inc., S. Van Elshocht, IMEC, Belgium |
| 11:40am | TF+EM-WeM12 Depth Resolved Cathodoluminescence Spectroscopy of Amorphous High-k Dielectric LaLuO3 S. Shen, Ohio State University, Y. Liu, R.G. Gordon, Harvard University, L.J. Brillson, Ohio State University |