| AVS 57th International Symposium & Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | EM+SS-ThM1 Invited Paper Recent Advances in the MOCVD Growth of III-N Light Emitting Diodes R.D. Dupuis, J.-H. Ryou, H.-J. Kim, J. Liu, Z.M. Lochner, J. Kim, S. Choi, S.-S. Kim, Georgia Institute of Technology |
| 8:40am | EM+SS-ThM3 Microstructural Comparison of InGaN/GaN Multi Quantum Wells Grown on SiC and GaN Substrates F. Liu, L. Huang, Carnegie Mellon University, E.A. Preble, T. Paskova, K. Evans, Kyma Technologies, Inc., R.F. Davis, L.M. Porter, Carnegie Mellon University |
| 9:00am | EM+SS-ThM4 Switching GaN Polarity on Homoepitaxial Substrates J.K. Hite, M.E. Twigg, M.A. Mastro, F.J. Kub, C.R. Eddy, Jr., Naval Research Laboratory |
| 9:20am | EM+SS-ThM5 Studies of InGaN Growth Morphology and Its Relationship to Multiple Quantum Well Luminescence D. Koleske, S.R. Lee, M.H. Crawford, M.E. Coltrin, J.M. Kempisty, K.C. Cross, Sandia National Laboratories |
| 9:40am | EM+SS-ThM6 High-Quality, Large-Area, and Free-Standing GaN Epilayer Growth and Liftoff using Self-Assembled Interlayer of Silica Microspheres Q. Li, G.T. Wang, Sandia National Laboratories |
| 10:40am | EM+SS-ThM9 Invited Paper GaN(0001) Surface at Various Conditions: Fundamental Properties and Basic Dynamic Processes - Ab Initio Study S.K. Krukowski, Polish Academy of Sciences, Poland |
| 11:20am | EM+SS-ThM11 Surface Photovoltage Behavior for p-type vs. n-type GaN A.A. Baski, M. Foussekis, M.A. Reshchikov, Virginia Commonwealth |
| 11:40am | EM+SS-ThM12 Investigation of the Structure of GaN(0001) Pseudo-1x1 Structure at Low Temperature A.R. Smith, T. Chen, K. Wang, Y. Liu, Ohio University Nanoscale and Quantum Phenomena Institute |