AVS 57th International Symposium & Exhibition
    Electronic Materials and Processing Thursday Sessions
       Session EM+SS-ThM

Invited Paper EM+SS-ThM1
Recent Advances in the MOCVD Growth of III-N Light Emitting Diodes

Thursday, October 21, 2010, 8:00 am, Room Dona Ana

Session: Nitride Surfaces and Interfaces
Presenter: R.D. Dupuis, Georgia Institute of Technology
Authors: R.D. Dupuis, Georgia Institute of Technology
J.-H. Ryou, Georgia Institute of Technology
H.-J. Kim, Georgia Institute of Technology
J. Liu, Georgia Institute of Technology
Z.M. Lochner, Georgia Institute of Technology
J. Kim, Georgia Institute of Technology
S. Choi, Georgia Institute of Technology
S.-S. Kim, Georgia Institute of Technology
Correspondent: Click to Email
Group III-nitride-based green light-emitting diodes (LEDs) are increasingly used in applications for full-color displays, back-lighting, and color-mixing-based general illumination lighting systems. Recently, the potential for III-N LEDs to replace all forms of conventional lighting sources has been discussed and advanced white-light LEDs have entered the market place for general consumer use. However, significant fundamental and technical challenges remain for III-N LEDs to achieve their full potential, such as the improvement of the peak internal quantum efficiency (IQE) and the minimization of the efficiency droop with increasing injection current density. For full-color lighting based upon III-N RGB LEDs, other impediments remain. The peak IQE of green LEDs are significantly lower than shorter-wavelength InAlGaN-based blue and longer-wavelength InAlGaP-based red LEDs, a feature referred to as a “green gap”. In addition, the efficiency of green LEDs at high drive currents decreases with increasing injection current more significantly than in blue LEDs. In this paper, we will review some of the recent work and advances in the area of improving the high-current-density performance of III-N LEDs.