AVS 57th International Symposium & Exhibition
    Vacuum Technology Tuesday Sessions
       Session VT-TuP

Paper VT-TuP6
High-k Gate Dielectric and Electrical and Surface Studies of Al2O3, HfO2, La2O3, AlxHfyOz, and ZrO2/HfO2 on Silicon via Atomic Layer Deposition

Tuesday, October 19, 2010, 6:00 pm, Room Southwest Exhibit Hall

Session: Vacuum Technology Poster Session and Student Posters
Presenter: Y.S. Lin, UCLA
Authors: G. Hernandez, UCLA
R. Candler, UCLA
S. Franz, UCLA
Y.S. Lin, UCLA
Correspondent: Click to Email
As the dimensions of the metal oxide semiconductor transistor shrink, quantum mechanical effects become more prominent. We are quickly reaching the limitations of SiO2 thickness of 10 -12 Å in which the tunneling current degrades device performance. Therefore, high dielectric constant materials are needed to replace SiO2 as the gate dielectric as we proceed to smaller devices. High-dielectric materials we study are Al2O3, HfO2, La2O3, AlxHfyOz, and ZrO2/HfO2 deposited via Atomic Layer Deposit. We expect the aforementioned materials to have a lower leakage current and a band gap close to SiO2. We expect the nanolaminates to have a smoother interfaces as the expense of a a band-gap in between each of its constituents. In order to characterize the electrical properties of each oxide, capacitors will be fabricated with oxide thicknesses of 50,100, and 150 Å. We will study the effects of different annealing /deposition temperature at the silicon-oxide interface by TEM. We also characterize the films with the material by XPS, AFM, and spectroscopic ellipsometry. The electrical properties will be determined by C-V and I-V measurements.