AVS 57th International Symposium & Exhibition
    Thin Film Tuesday Sessions
       Session TF1-TuM

Invited Paper TF1-TuM1
Feasibility of Wrinkle Free Graphene Process

Tuesday, October 19, 2010, 8:00 am, Room Pecos

Session: ALD: Dielectrics for Semiconductors
Presenter: B.H. Lee, Gwangju Institute of Science and Technology, Korea
Authors: B.H. Lee, Gwangju Institute of Science and Technology, Korea
C.H. Cho, Gwangju Institute of Science and Technology, Korea
S.K. Lim, Gwangju Institute of Science and Technology, Korea
S.Y. Lee, Gwangju Institute of Science and Technology, Korea
H.J. Hwang, Gwangju Institute of Science and Technology, Korea
Y.-G. Lee, Gwangju Institute of Science and Technology, Korea
U.J. Jung, Gwangju Institute of Science and Technology, Korea
C.G. Kang, Gwangju Institute of Science and Technology, Korea
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Graphene is an attractive material for advanced device applications due to its excellent electrical conductivity. Up to now, the best quality graphene in terms of electrical properties are obtained only from the graphene mechanically exfoliated from a natural graphite. Other processes such as a thermal graphitization of SiC and a precipitated graphene from metal films super saturated with carbon atoms did generate a good quality graphene in terms of Raman analysis. However, the morphology of graphene shows a high density of physical defects such as micro size wrinkles, island growth etc. For practical application of nanoscale device fabrication, global size wrinkles should be eliminated like a flat silicon substrate. Major sources of global defects in graphene are 1) a mismatch of thermal expansion coefficient between the graphene and the growth templates (metal, SiC etc), 2) a preferential out-diffusion or adoption of carbon along the grain boundary of metal. In this talk, a novel process that can detour these problems and generate a wrinkle free graphene will be discussed.