Paper TF-ThP9
Synthesis and Characterization of Molybdenum Oxynitride Thin Films
Thursday, October 21, 2010, 6:00 pm, Room Southwest Exhibit Hall
| Session: |
Thin Film Poster Session II |
| Presenter: |
J.Y. Park, Pukyong National University, Republic of Korea |
| Authors: |
J.Y. Park, Pukyong National University, Republic of Korea
Y.C. Kang, Pukyong National University, Republic of Korea
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| Correspondent: |
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Molybdenum oxynitride films were deposited on the p-type Si(100) substrate using radio frequency (r.f.) magnetron sputtering technique at different nitrogen gas ratio from 0 to 100%. Molybdenum oxynitride films were investigated by atomic force microscopy (AFM), X-ray diffraction (XRD), scanning electron microscopy (SEM), spectroscopic ellipsometry (SE), and X-ray photoelectron spectroscopy (XPS).
The roughness of molybdenum oxynitride films were slightly increased up to 13% of nitrogen gas ratio then decreased significantly. XRD results show that the crystal structure was metallic Mo(110) at the 0% of nitrogen gas ratio. The thickness of molybdenum oxynitride films was decreased to 70 from 800 nm with increasing nitrogen gas ratio. The thickness deduced from SE experiment was well consistent with the result of SEM and band gap was calculated using extinction coefficient values obtained by SE. The high resolution XP spectra of Mo 3d, O 1s, and N 1s were deconvoluted to get more chemical information and valence band maximum was determined with valence band region XP spectra of molybdenum oxynitride thin films.