| AVS 57th International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Film Poster Session II |
| Presenter: | M. Chen, The University of Alabama |
| Authors: | M. Chen, The University of Alabama V.C. Rincon, The University of Alabama H.V. Nampoori, The University of Alabama R.M. Frazier, The University of Alabama S. Kotru, The University of Alabama |
| Correspondent: | Click to Email |
Sn-doped In2O3 (ITO) thin films find wide applications as an electrode material for photovoltaic devices. Optical transparency, electrical properties and surface roughness are the major parameters which need to be optimized for obtained device quality films for such applications. In the present work 100 nm thick ITO films were deposited on quartz substrates at room temperature using a vapor deposition technique, where a pulsed electron beam was used to ablate the target material. A series of films were deposited by varying the oxygen pressure in chamber during growth from 3.1mTorr to 20mTorr. Various characterization techniques were applied: x-ray diffraction, atomic force microscopy, four-point probe, Hall analysis, and Spectrophotometry were used to investigate the structure, surface morphology, electrical, and optical properties of these films. The best samples had a film resistivity of 6.8E-4ohm*cm, and an average transmittance of 80% in the visible spectrum. The influence of post annealing on the film properties was also be presented.