| AVS 57th International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Film Poster Session II |
| Presenter: | J. Hernández-Rosas, IPN, Mexico |
| Authors: | J. Hernández-Rosas, IPN, Mexico C. Mejía-García, IPN, Mexico A. Winter, Universität Bayreuth, Germany M. López-López, IPN, Mexico A. Gilinsky, Institute of Semiconductor Physics SB RAS, Russia H. Pascher, Universität Bayreuth, Germany |
| Correspondent: | Click to Email |
In this work, we report the photoluminescence spectroscopy using Hanle effect of a series of quantum well (QW) structures of Al0.3Ga0.7As/GaAs grown by molecular beam epitaxy, which were prepared using different processing of the GaAs buffer layer surface. Each sample consists of three QW’s with thicknesses of 7, 5, and 3 nm, respectively. The characterization by photoluminescence spectroscopy was done using several fixed wavelength lasers with circularly polarized excitation at 1.6 K. By means of Hanle effect the interband lifetime τ and the spin lifetime τs of the electrons were determined. A polarization change was observed if the photon energy of the exciting light exceeds the difference between the spin orbit band and the conduction band. The intensity of the inverse circular polarization seems to be increased in the samples with better quality. Interband transitions associated to the QW’s were calculated using the effective mass approximation method in order to verify the experimental results.