AVS 57th International Symposium & Exhibition
    Thin Film Thursday Sessions
       Session TF-ThP

Paper TF-ThP21
Influence of the Fluorine Doping on the Properties of SnO2 Thin Films

Thursday, October 21, 2010, 6:00 pm, Room Southwest Exhibit Hall

Session: Thin Film Poster Session II
Presenter: F.J. De Moure-Flores, CINVESTAV-IPN, Mexico
Authors: F.J. De Moure-Flores, CINVESTAV-IPN, Mexico
K.E. Nieto-Zepeda, CINVESTAV-IPN, Mexico
J.G. Quiñones-Galvan, CINVESTAV-IPN, Mexico
A. Hernandez-Hernandez, CINVESTAV-IPN, Mexico
M. Olvera, CINVESTAV-IPN, Mexico
M.A. Melendez-Lira, CINVESTAV-IPN, Mexico
Correspondent: Click to Email
We propose the addition of fluorine in SnO2 to increase n-type doping be used as transparent electrode in photovoltaic heterostructure. The thin films were deposited on glass substrates (at different temperatures) by RF magnetron sputtering using a SnO2:F target employing an argon atmosphere. The thin films were thermal annealed using a nitrogen flux. We present results of the structural and chemical characterization obtained through X-ray diffraction, atomic force microscopy (AFM), scanning electron microscopy (SEM) and energy dispersive X-ray microanalysis (EDX). The electrical, optical and structural properties were determined before and after heat treatment; the results are discuss in terms of growth details.