AVS 57th International Symposium & Exhibition
    Thin Film Thursday Sessions
       Session TF-ThP

Paper TF-ThP17
Ar/O2 Plasma Treatment Effects on Structural, Optical and Electrical Properties of Sputtering-deposited CdS Thin Films

Thursday, October 21, 2010, 6:00 pm, Room Southwest Exhibit Hall

Session: Thin Film Poster Session II
Presenter: S.-H. Ryu, Chosun University, Republic of Korea
Authors: S.-H. Ryu, Chosun University, Republic of Korea
K.D. Myung, Chosun University, Republic of Korea
J.-S. Park, Chosun University, Republic of Korea
N.-H. Kim, Chonnam National University, Republic of Korea
W.-S. Lee, Chosun University, Republic of Korea
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CdS thin film has been widely used in the heterostructured solar cell applications as a window layer, which is a well-known n-typed semiconductor material. The sputtering method was employed for a large-area preparation of CdS thin film by the author in the previous study. It was good quality and had the high transmittance through it. In this study, the sputtering-deposited CdS thin films were treated by the plasmas under the various conditions with some process parameters including RF power, gas flow rate and treatment time with Ar or O2 gases. Surface morphology and structure of them were analyzed by AFM and XRD. The effects of each plasma treatment on the electrical and optical properties of CdS thin film were investigated by UV-Visible spectrophotometer and Hall effect measurement. The roles of morphology and structure of plasma-treated CdS thin films were compared by the optical and electrical characteristics. The improved cell parameters of CdTe / the plasma-treated CdS thin film solar cells, including short-circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF), and efficiency, were also obtained at the condition for the good properties of the plasma-treated CdS thin film. Acknowledgement: This work was supported by National Research Foundation of Korea(NRF) grant funded by the Korean Government(MEST) (20 10-0016048).