| AVS 57th International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Film Poster Session II |
| Presenter: | D.R. Liou, Instrument Technology Research Center, Taiwan, Republic of China |
| Authors: | C.T. Lee, Instrument Technology Research Center, Taiwan, Republic of China B.H. Liou, Instrument Technology Research Center, Taiwan, Republic of China D.R. Liou, Instrument Technology Research Center, Taiwan, Republic of China C.N. Hsiao, Instrument Technology Research Center, Taiwan, Republic of China |
| Correspondent: | Click to Email |
ZnO:Al (AZO) thin film was prepared on glass substrate with various substrate temperatures by RF magnetron sputtering deposition. Various substrate temperatures and 500 ℃ annealing on the electrical and optical properties of as-deposited AZO film were investigated by Hall measurement and spectrometer. The minimum resistivity of the as-deposited AZO film was 1.0 X 10-3 ohm cm at the substrate temperature of 300 ℃. After annealing, the resistivity of all films was improved. The optimum resistivity of AZO thin film is 5.6 X 10-4 ohm cm. The average transmittance of AZO thin films in the visible range was decreased with increased substrate temperature. It was found that the minimum resistivity and maximum average transmittance of 82% in the visible range were at substrate temperature of 300 ℃ and after 500 ℃ annealing.