AVS 57th International Symposium & Exhibition
    Thin Film Thursday Sessions
       Session TF-ThP

Paper TF-ThP10
Effects of Non-Uniformity for GaN Deposition by the Structure of Gas Inlet in MOCVD

Thursday, October 21, 2010, 6:00 pm, Room Southwest Exhibit Hall

Session: Thin Film Poster Session II
Presenter: T. Lee, JUSUNG Engineering, Republic of Korea
Authors: W. Yang, Kunsan National University, Republic of Korea
K. Hong, Kunsan National University, Republic of Korea
J. Joo, Kunsan National University, Republic of Korea
S. Lee, JUSUNG Engineering, Republic of Korea
T. Lee, JUSUNG Engineering, Republic of Korea
Correspondent: Click to Email
GaN deposition equipment and processes for white LED (Light Emitting Diode) at MOCVD (Metalorganic Chemical Vapor Deposition) were numerically modeled to analyze the effects of reactive gas introduction strategy. The source gases, TMGa and NH3, were injected from shower head on the top of chamber, and the carrier gases, H2 or N2, were introduced from two types of structure: vertical injection and horizontal injection. Wafers are setting on the holder at a radial distance of between 100 mm and 150 mm. The non-uniformity of deposition rate for vertical injection and horizontal injection was 1.9 % and 2.8 %, respectively. And In case of using the N2 carrier gas instead of H2, the uniform deposition zone was increased by 20%.