AVS 57th International Symposium & Exhibition
    Plasma Science and Technology Monday Sessions
       Session PS2-MoA

Paper PS2-MoA6
Micro-discharge Plasma using Silicon Platform

Monday, October 18, 2010, 3:40 pm, Room Galisteo

Session: Atmospheric Plasma Processing and Micro Plasmas
Presenter: M.K. Kulsreshath, CNRS/Université D'Orleans, France
Authors: M.K. Kulsreshath, CNRS/Université D'Orleans, France
T. Dufour, CNRS/Université D'Orleans, France
P. Lefaucheux, CNRS/Université D'Orleans, France
O. Aubry, CNRS/Université D'Orleans, France
S. Dozias, CNRS/Université D'Orleans, France
P. Ranson, CNRS/Université D'Orleans, France
J.-B. Lee, University of Texas, Dallas
M.J. Goeckner, University of Texas, Dallas
L.J. Overzet, University of Texas, Dallas
R. Dussart, CNRS/Université D'Orleans, France
Correspondent: Click to Email

Micro-discharges can be produced in a variety of different configurations and using a variety of different technologies. The properties of these micro-discharges have been examined with increasing interest during the past decade. There has also been intense interest in new fabrication techniques for the production of micro-discharges. In this paper we present the fabrication technology used to make micro-discharge “reactors” on a silicon (Si) substrate along with selected plasma properties. For the fabrication of these reactors we have used 4” Si wafers and standard cleanroom facilities. The fabrication technology used is compatible with standard CMOS device fabrication and the micro-discharge reactors fabricated can be used to produce either DC or AC discharges. The micro-discharges operate well at high-pressure. They were given planar cathodes and ring-shaped anodes separated by a SiO2 dielectric with a thickness of approximately 5-6 μm rather than the much more common ~100 μm. The micro-discharge reactors can consist of either a single hole or multiple holes and we have built devices with holes from 25 to 150 microns in diameter. The micro-discharge measurements were obtained for inert gas, DC plasmas between 100 and 1000 Torr. Although we used only a single ballast resistor, many hole micro-discharges were obtained because the cathode surface area of each micro-discharge was limited. This also acts to limit the discharge power. In addition, we will report on current leakage and parasitic sparks during high pressure operation. Finally, we discuss the spread of the micro-discharge over the anode and cathode surfaces as well as the life time of the micro-discharge reactors.