In this work we present results from a pulsed etching system with XeF2 for an expanded temperature range while at the same time determining the roughness of the substrate left behind. The experimental apparatus used for the work presented in this paper is capable of temperature ranges from approximately 100 K to 800 K. Data was taken at a constant etching pressure (1 Torr) so the effect of temperature on etch rate and roughness could be studied. Etch rates were determined by varying the duration of the pulse and surface roughness was characterized using an AFM.