AVS 57th International Symposium & Exhibition
    MEMS and NEMS Thursday Sessions
       Session MN-ThA

Paper MN-ThA7
NanoFIBrication of UHAR Vias Using a Material Shaping Technique for Phononic Crystals

Thursday, October 21, 2010, 4:00 pm, Room Santo Domingo

Session: Integration, Packaging and Reliability of MEMS and NEMS
Presenter: D.F. Goettler, University of New Mexico
Authors: D.F. Goettler, University of New Mexico
Z.C. Leseman, University of New Mexico
Correspondent: Click to Email
In this paper we present both experimental and theoretical results showing the effective use of material shaping to fabricate ultra-high-aspect-ratio (UHAR) vias with a focused ion beam (FIB). With this technique, one can create vias with aspect ratios of 50:1 and higher. This is achieved by placing a ‘lower sputter rate’ material on top of a ‘higher sputter rate’ material. We model the FIB as a Gaussian beam with an angular dependent sputter rate. With our model we predict a high sputter rate ratio (high/low) can achieve vias with aspect ratios near 50:1. Experimental results support this prediction. By placing a thin layer of pyrolized carbon on top of silicon, we fabricated UHAR vias. For completeness, we also reversed the sputter rate ratio by placing a ‘higher sputter rate’ material on top of a ‘lower sputter rate’ material. Once again, experimental results support the model’s predictions. Vias with radii 15 nm have been NanoFIBricated. Using these techniques we have created phononic crystals operating in the GHz regime.