| AVS 57th International Symposium & Exhibition | |
| Graphene Focus Topic | Thursday Sessions |
| Session GR+AS+TF+MI-ThA |
| Session: | Graphene: Surface Characterization |
| Presenter: | K.D. Kubista, Georgia Institute of Technology |
| Authors: | K.D. Kubista, Georgia Institute of Technology D.L. Miller, Georgia Institute of Technology M. Ruan, Georgia Institute of Technology W.A. de Heer, Georgia Institute of Technology P.N. First, Georgia Institute of Technology G.M. Rutter, National Institute of Standards and Technology J.A. Stroscio, National Institute of Standards and Technology |
| Correspondent: | Click to Email |
We present tunneling differential conductance (dI/dV) spectra and 2D conductance maps acquired over both positive and negative defects in magnetic fields up to 8 T. The measurements were performed on multilayer epitaxial graphene using scanning tunneling microscopy and spectroscopy at 4 K under ultrahigh vacuum conditions. Landau level drift states are found to follow the local potential (determined independently at near-zero magnetic field), but near a negatively-charged defect a bound (or quasibound) state originates from the n = -1 Landau Level. The defect state Stark shifts and finally ionizes under the influence of the STM tip electric field.