AVS 57th International Symposium & Exhibition
    Energy Frontiers Topical Conference Monday Sessions
       Session EN+PS-MoM

Paper EN+PS-MoM10
Effects of Hole-Array-Electrode on the Characteristics of Radio Frequency Capacitively Coupled Plasma Sources for uc-Si Thin Film PECVD

Monday, October 18, 2010, 11:20 am, Room Mesilla

Session: Plasmas for Photovoltaics & Energy Applications
Presenter: H.-J. Lee, Pusan National University, Republic of Korea
Authors: H.-J. Lee, Pusan National University, Republic of Korea
S.-S. Wi, Pusan National University, Republic of Korea
D. Kim, LG Electronics, Republic of Korea
D. Hwang, LG Electronics, Republic of Korea
W.S. Chang, LG Electronics, Republic of Korea
Correspondent: Click to Email
In order to improve the productivity of thin film growth in rf capacitively coupled plasma based chemical vapor deposition system, modifications of electrode surface geometry has frequently been used. Array of holes in the shower head electrode is probably the most popular one. In this paper, using self-consistent fluid approximation with collisional sheath model, we have analyzed the effects of the hole array on the plasma characteristics in terms of plasma density, electron temperature, ion current density, sheath voltage and electron heating efficiency. It is shown that electron heating efficiency of the hole array electrode increases more than 10 % compared with that of flat electrodes. DC bias voltage at the substrate side increases with hole depth and pitch due to increase in surface area ratio between powered and substrate electrode. Peak electron density near throat region of the hole structure becomes more than 2 time higher than that of flat parallel electrode at the same voltage driving condition. It was experimentally verified that these variations of plasma properties is beneficial for high rate of Si thin film deposition