AVS 57th International Symposium & Exhibition
    Spectroscopic Ellipsometry Focus Topic Thursday Sessions
       Session EL+AS+EM+MS+TF-ThP

Paper EL+AS+EM+MS+TF-ThP3
Spectroscopic Ellipsometry and X-ray Photoelectron Spectroscopy of La2O3 Thin Films Deposited by Reactive Magnetron Sputtering

Thursday, October 21, 2010, 6:00 pm, Room Southwest Exhibit Hall

Session: Spectroscopic Ellipsometry Focus Topic Poster Session
Presenter: V. Atuchin, Institute of Semiconductor Physics, Russia
Authors: V. Atuchin, Institute of Semiconductor Physics, Russia
A.V. Kalinkin, Boreskov Institute of Catalysis, Russia
V.A. Kochubey, Institute of Semiconductor Physics, Russia
V.N. Kruchinin, Institute of Semiconductor Physics, Russia
R.S. Vemuri, University of Texas at El Paso
C.V. Ramana, University of Texas at El Paso
Correspondent: Click to Email

Lanthanum trioxide (La2O3) is one among the most promising high-k dielectric materials to replace SiO2 and Si3N4 in advanced metal-oxide-semiconductor devices in gate stack. La2O3 can be prepared by various techniques but the film properties are strongly dependent on the fabrication conditions. Reactive magnetron sputtering deposition is widely used for the preparation of high quality transition multivalent metal oxide films with reproducible parameters and controlled thickness. The technique is preferred since it usually offers a high deposition rate for oxide films and a possibility to control the chemical composition of the film by reactive atmosphere in vacuum chamber. The aim of the present study is to understand the surface structure and evaluate the optical parameters of La2O3 films deposited on Si substrates by magnetron sputtering. La2O3 thin films were deposited onto Si(100) substrates in an argon/oxygen atmosphere using a high purity La target (99.9%). Structural parameters of the films were estimated by reflective high energy electron diffraction (RHEED) method at electron energy of 50 keV. All the films show no diffraction pattern indicating their amorphous nature in the near surface layers. Chemical state examined by the X-ray photoelectron spectroscopy (XPS), SPECS device, monochromatic Al Ka radiation (1486.6 eV) before and after Ar+ (2.5 keV, 2 min) sputtering indicates the stoichiometric film formation. Chemical nature of the species was identified with using binding energy (BE) difference parameter DLa = BE (La 3d5/2) - BE (O 1s) [1]. Optical parameters of the films were measured with spectroscopic ellipsometry (SE) using a Spectroscan ellipsometer in the spectral range of 250 nm < l < 1100 nm at the incidence angle of 70°. The La2O3 films with thickness 500-850 nm were transparent over the spectral range and dispersion relations of refractive index n were well derived using a model of (air)/(single homogeneous layer)/(Si substrate). The curves n(l) were approximated by Caushy polynomials. Good relation between experimental points and theoretical curves confirms applicability of this simple model for the films. The optical parameters of La2O3 defined with SE are related to film bulk and are insensitive to top surface effects induced by hydration or carbonate formation. These parameters will be used as a basis for SE evaluation of nanometric lanthanum oxide films with thickness below 10 nm.
 
1.V.V. Atuchin, T.A. Gavrilova, J.-C. Grivel, V.G. Kesler, Electronic structure of layered ferroelectric high-k titanate La2Ti2O7, J. Phys. D: Appl. Phys. 42 (2009) 035305.