| AVS 57th International Symposium & Exhibition | |
| Applied Surface Science | Wednesday Sessions |
| Session AS-WeM |
| Session: | New Ion Beam Technologies for Imaging, Sample Preparation and Analysis |
| Presenter: | J.V. Branson, Sandia National Laboratories |
| Authors: | J.V. Branson, Sandia National Laboratories K. Hattar, Sandia National Laboratories G. Vizkelethy, Sandia National Laboratories C.J. Powell, Sandia National Laboratories P. Rossi, University of Padua and INFN, Italy B.L. Doyle, Sandia National Laboratories |
| Correspondent: | Click to Email |
The development of a new radiation effects microscopy (REM) technique is crucial as emerging semiconductor technologies demonstrate smaller feature sizes and thicker back end of line (BEOL) layers. To penetrate these materials and still deposit sufficient energy into the device to induce single event effects, high energy heavy ions are required. Ion photon emission microscopy (IPEM) is a new technique that utilizes coincident photons, which are emitted from the location of each ion impact to map out regions of radiation sensitivity in integrated circuits and devices, circumventing the obstacle of focusing high-energy heavy ions. The (x,y) coordinates are instead determined with a single photon, position-sensitive detector. Thus, a high energy broad beam can be used to achieve high LETs, while still mapping out radiation-sensitive regions with sufficient resolution. Several versions of the IPEM have been developed and implemented at Sandia National Laboratories (SNL). The initial IPEM was a tabletop system, which utilized a Po-210 alpha source as the incident radiation. The second version has been utilized on the microbeam line of the 6 MV tandem accelerator at SNL, which allows for direct results comparisons between data obtained with a scanned, focused microbeam, and that from IPEM. Another IPEM was designed for ex-vacu use at the 88” cyclotron at Lawrence Berkeley National Laboratory (LBNL). That facility allows for the use of a heavy ion cocktail, with beam energies up to several GeV. Extensive engineering is involved in the development of these IPEM systems, including resolving issues with electronics, event timing, optics, phosphor selection, and mechanics. The various versions of the IPEM and the obstacles, as well as benefits associated with each will be presented. In addition, the current stage of IPEM development as a user instrument will be discussed in the context of recent results.
*Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a wholly-owned subsidiary of Lockheed Martin company, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.