| AVS 56th International Symposium & Exhibition | |
| Plasma Science and Technology | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS2+MN-WeA1 Advanced DRIE Via Etching F. Gao, D. James, K. Kolari, J. Kiihamäki, VTT Technical Research Centre of Finland, M. Muggeridge, Aviza Technology, Inc. |
| 2:20pm | PS2+MN-WeA2 The Generation and Removal of Heat during DRIE of High Aspect Ratio Structures in SOI with Buried Cavities J. Dekker, F. Gao, J. Kyynäräinen, J. Kiihamäki, VTT Microelectronics Research Center of Finland |
| 2:40pm | PS2+MN-WeA3 Ion Trajectory Prediction at High-Aspect-Ratio Hole Etching by the Combination of On-Wafer Monitoring and Sheath Modeling H. Ohtake, S. Fukuda, B. Jinnai, Tohoku University, Japan, T. Tatsumi, OKI Semiconductor Miyagi Co., Ltd., Japan, S. Samukawa, Tohoku University, Japan |
| 3:00pm | PS2+MN-WeA4 Enhancement Mechanism of Distortion and Twisting in Ultra High Aspect Ratio Dielectric Etching H. Mochiki, Tokyo Electron AT Ltd., Japan, K. Yatsuda, Tokyo Electron Ltd., Japan, S. Okamoto, F. Inoue, Tokyo Electron AT Ltd., Japan |
| 4:00pm | PS2+MN-WeA7 Invited Paper High Rate Deep Si Etching for TSV Applications I. Sakai, N. Sakurai, T. Ohiwa, Toshiba Corporation, Japan |
| 4:40pm | PS2+MN-WeA9 Infinitely High Etch Selectivity and Variation of Line Edge Roughness during Etching of Hard-Mask Layer with Patterned Extreme Ultra-Violet B.S. Kwon, J.S. Kim, C.R. Jung, J.S. Park, W. Heo, N.-E. Lee, Sungkyunkwan University, Korea, S.K. Lee, Hynix Semiconductor, Republic of Korea |