| AVS 56th International Symposium & Exhibition | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS-TuA1 Correlation between Surface Chemistry and Ion Energy Dependence of the Etch Yield in Multicomponent Oxides Etching P.-M. Bérubé, J.-S. Poirier, J. Margot, L. Stafford, Université de Montréal, Canada, P.F. Ndione, M. Chaker, R. Morandotti, INRS-EMT, Canada |
| 2:20pm | PS-TuA2 Influence of Ion Energy and Ion Flux on Polystyrene Modification by Electron Beam Generated Plasma E.H. Lock, S.G. Walton, R.F. Fernsler, M. Baraket, Naval Research Laboratory |
| 2:40pm | PS-TuA3 Invited Paper Energy Considerations in Plasma-Surface Interactions M. Goeckner, C.T. Nelson, SP. Sant, E.A. Joseph, B.S. Zhou, L.J. Overzet, University of Texas at Dallas |
| 4:00pm | PS-TuA7 Effect of Energetic Ions on Plasma Damage of SiCOH Low-k Material E. Kunnen, A. Urbanowicz, D. Shamiryan, H. Bender, A. Franquet, H. Struyf, W. Boullart, M.R. Baklanov, IMEC, Belgium |
| 4:20pm | PS-TuA8 193 nm Photoresist Roughening in Plasmas: VUV Photons and Synergistic Mechanisms M.J. Titus, D.G. Nest, D.B. Graves, University of California, Berkeley |
| 4:40pm | PS-TuA9 Electron, Ion and Vacuum Ultraviolet Photon Beam Effects in 193 nm Photoresist Roughening T.-Y. Chung, D.G. Nest, G.K. Choudhary, J.J. Végh, D.B. Graves, University of California, Berkeley, F. Weilnboeck, G.S. Oehrlein, University of Maryland, College Park, E.A. Hudson, Lam Research Corp., M. Li, D. Wang, Dow Electronic Materials |
| 5:00pm | PS-TuA10 Ion and VUV Radiation Induced Material Modifications of Advanced Photoresists During Plasma-Etching: Temporal Evolutions of Modified Surface Layers F. Weilnboeck, R.L. Bruce, G.S. Oehrlein, University of Maryland, M. Li, D. Wang, Dow Electronic Materials, D.B. Graves, D.G. Nest, T.-Y. Chung, University of California, Berkeley, E.A. Hudson, Lam Research Corp. |
| 5:20pm | PS-TuA11 Mechanism for Generation of Molecular Level Line-Edge Roughness of ArF Photoresist during Plasma Etching Processes K. Koyama, B. Jinnai, Tohoku University, Japan, S. Maeda, K. Kato, A. Yasuda, H. Momose, Mitsubishi Rayon Co., Ltd., Japan, S. Samukawa, Tohoku University, Japan |
| 5:40pm | PS-TuA12 On the Absence of Post-Plasma Etch Surface and Line Edge Roughness in Vinylpyridine Resists R.L. Bruce, F. Weilnboeck, T. Lin, R.J. Phaneuf, G.S. Oehrlein, University of Maryland, W. Bell, C.G. Willson, UT-Austin, D.G. Nest, G.K. Choudhary, J.J. Végh, D.B. Graves, UC-Berkeley, A. Alizadeh, GE Global Research |