AVS 56th International Symposium & Exhibition | |
Electronic Materials and Processing | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:00am | EM2-TuM1 Electrical Properties of HfO2 Thin Films Made by RF Sputtering B. Aguirre, R.S. Vemuri, D. Zubia, University of Texas at El Paso, W. Jiang, M.H. Engelhard, V. Shutthanandan, Pacific Northwest National Laboratory, C.V. Ramana, University of Texas at El Paso |
8:20am | EM2-TuM2 XPS Characterization of Hf-based High-k Oxide/SiO2/Si Films Stacks E. Bersch, M. Di, University at Albany, S. Consiglio, R. Clark, G. Leusink, TEL Technology Center, America, LLC, A.C Diebold, University at Albany |
8:40am | EM2-TuM3 Enhanced Dielectric Polarizability of Ge Doped HfO2 Films on Si and Ge L. Miotti, K.P. Bastos, G. Lucovsky, North Carolina State University, D. Nordlund, Stanford Synchrotron Research Lightsource |
9:00am | EM2-TuM4 Invited Paper Correlated Oxide Heterostructures R. Ramesh, The University of California, Berkeley |
9:40am | EM2-TuM6 Polarization-dependent Electron Tunneling Into Ferroelectric Surfaces P. Maksymovych, S. Jesse, Oak Ridge National Laboratory, P. Yu, R. Ramesh, University of California, Berkeley, A.P. Baddorf, S.V. Kalinin, Oak Ridge National Laboratory |
10:40am | EM2-TuM9 XAS and XPES Studies of Strongly Correlated Ti d-states in Gd(Sc1-xTix)O3 G. Lucovsky, North Carolina State University, C. Adamo, Penn State University, D.L. Schlom, Cornell University, K.B. Chung, North Carolina State University |
11:00am | EM2-TuM10 ZnO/LiNbO3 Heterojunctions: A Candidate System For Multifunctional Oxides E. Cagin, J.D. Phillips, University of Michigan, Ann Arbor |
11:20am | EM2-TuM11 The Study of Electrical and Structural Properties of SiO2 Film Containing Metal oxide using Organosiloxane-based Silica Precursor K. Watanuki, A. Inokuchi, Tohoku University, Japan, A. Banba, H. Suzuki, T. Koike, T. Adachi, Ube-Nittou Kasei Co., Ltd., Japan, A. Teramoto, Y. Shirai, S. Sugawa, T. Ohmi, Tohoku University, Japan |