| AVS 56th International Symposium & Exhibition | |
| Thin Film | Tuesday Sessions |
| Session TF2-TuM |
| Session: | ALD/CVD: Basics, Organics, Electronics |
| Presenter: | M.M. Biener, Lawrence Livermore National Laboratory |
| Authors: | M.M. Biener, Lawrence Livermore National Laboratory J. Biener, Lawrence Livermore National Laboratory H. Obloh, Fraunhofer-Institut für Angewandte Festkörperphysik, Germany S.O. Kucheyev, Lawrence Livermore National Laboratory Y.M. Wang, Lawrence Livermore National Laboratory W. Mueller-Sebert, Fraunhofer-Institut für Angewandte Festkörperphysik, Germany B.S. El-Dasher, Lawrence Livermore National Laboratory A. Kriele, Fraunhofer-Institut für Angewandte Festkörperphysik, Germany N.E. Teslich Jr., Lawrence Livermore National Laboratory C. Wild, Fraunhofer-Institut für Angewandte Festkörperphysik, Germany A.V. Hamza, Lawrence Livermore National Laboratory |
| Correspondent: | Click to Email |
The development of diamond chemical vapor deposition (CVD) techniques has led to numerous thin film applications. Besides grain boundary engineering, doping is one way to further optimize diamond’s unique materials properties for a given application. Here, we report on controlled doping of synthetic diamond with Mo and W by adding volatile metal precursors to the diamond CVD growth process. Effects of deposition temperature, grain structure and precursor exposure on the doping level are systematically studied. The metal atoms are uniformly distributed throughout the CVD diamond film, and doping levels of up to 0.25 at.% have been achieved. Rutherford backscattering/ channeling experiments reveal that the metal atoms do not occupy substitutional or interstitial sites, thus suggesting the formation of more complex sites such as metal-vacancy clusters.
Work at LLNL was performed under the auspices of the U.S. DOE by LLNL under Contract DE-AC52-07NA27344.