AVS 56th International Symposium & Exhibition
    Surface Science Friday Sessions
       Session SS2-FrM

Paper SS2-FrM1
Observation of Realtime Oxidation of Si(111) Surfaces using Second Harmonic Generation

Friday, November 13, 2009, 8:20 am, Room N

Session: Semiconductor Surfaces and Interfaces II: Si
Presenter: K. Gundogdu, North Carolina State University
Authors: K. Gundogdu, North Carolina State University
B. Gokce, North Carolina State University
E.J. Adles, North Carolina State University
D.E. Aspnes, North Carolina State University
Correspondent: Click to Email
Realtime material diagnostics during material growth is commonly used in industrial applications. Linear optical methods specifically spectroscopic ellipsometry (SE) probe thin film thickness with a nanometer precision by measuring the change in dielectric susceptibility during material growth. However SE is a spatially averaging technique and therefore can not probe the chemical change at the bond level. In this work we show that second harmonic generation experiments can be used to directly visualize changes in interface and surface bonds in realtime, providing a powerful bond structure characterization tool. We employed SHG experiments to probe the oxidation of hydrogen terminated Si(111) surfaces. We are able to extract the oxidation rates for different bonds on Si(111) surfaces that are nominally flat and with vicinal cut. We found that the initial hydrogen termination process effects the oxidation rate in the bond level. We compare the results of SHG measurements with that of spectroscopic ellipsometry.