Invited Paper SE2-MoM8
Deposition Rates of High Power Impulse Magnetron Sputtering: Physics and Economics

Monday, November 9, 2009, 10:40 am, Room C4

Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to direct current (DC) sputtering of equal average power. In this contribution, absolute and relative (normalized) deposition rates are compared, and the underlying physical reasons for differences are discussed, including (i) ion return for self-sputtering, (ii) the less-than-linear increase of the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) change in plasma impedance and sheath voltage, (v) changes in film density, (vi) noticeable losses in the switch module, (vii) changes of the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (viii) superposition of sputtering and evaporation for selected materials. The situation is even more complicated in reactive systems where the target surface chemistry is a function of the discharge conditions. While generally these factors imply a reduction of the normalized deposition rate, increased rates have been reported for certain conditions. Finally, some points of economics and “value added” are considered.

This work was supported by the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.