AVS 56th International Symposium & Exhibition | |
Plasma Science and Technology | Thursday Sessions |
Session PS2-ThM |
Session: | Plasma Sources |
Presenter: | J.H. Lim, Sungkyunkwan University, Korea |
Authors: | J.H. Lim, Sungkyunkwan University, Korea K.N. Kim, Sungkyunkwan University, Korea G.H. Gweon, Sungkyunkwan University, Korea S.P. Hong, Sungkyunkwan University, Korea G.Y. Yeom, Sungkyunkwan University, Korea |
Correspondent: | Click to Email |
Inductively coupled plasmas sources (ICPs) have been applied to a variety of plasma processing including flat panel display processing (FPD) and semiconductor processing. Especially, for the FPD applications, to increase the inductive coupling to the plasma, internal-type antennas have been more intensively investigated.
In this study, the plasma characteristics of an internal-type linear ICP source having the size of 2750mm χ 2350mm installed with a Ni-Zn ferrite module was investigated. Especially, the effect of the Ni-Zn ferrite and different driving frequency of 2MHz and 13.56MHz on the plasma characteristics and electrical characteristics of the plasma source was investigated.
The results showed that, by the magnetic field enhancement using the ferrite, the operation of the antenna at 2MHz showed higher power transfer efficiency, lower antenna impedance, and lower rf rms voltage compared to that operated at 13.56MHz without the ferrite. For the ferrite enhanced ICP source operated at 7kW of 2MHz rf power, high density plasmas on the order of 2.0 x 1011cm-3 could be obtained with 15mTorr Ar which was about two higher than that obtained for the source operated at 13.56MHz. When photoresist etch uniformity was measured by etching the phtoresist using 40mTorr Ar/O2(7:3) mixture for the operation at 2MHz with the ferrite module, the etch uniformity of about 11% could be obtained.