Paper PS2+TF-WeM12
3D Plasma Simulations of a High Density Plasma CVD Reactor using VIZGLOW

Wednesday, November 11, 2009, 11:40 am, Room B2

High-density plasma CVD (HDP-CVD) reactors are used to provide void-free gap fill of high-quality dielectric films in high aspect ratio device structures. The ability to accurately model a prototype or development design is a necessary capability of any equipment manufacturer in order to lower cost and shorten design cycle times. However, the ability to model an HDP-CVD tool accurately remains a difficult challenge due to the complex coupling of power deposition and plasma transport in a CVD chamber. To investigate issues related to power deposition and electron transport, we have used the VIZGLOW simulation software developed at Esgee Technologies to simulate 3D geometries. The simulation software enables the solution of the energy equation for electron temperature, while solving for the electron density and electrostatic fields through a quasi-neutrality condition. Electron heating is produced by electromagnetic fields, while the energy equation is solved for all heavy species. The HDP-CVD tool considered is a hemispherical inductively coupled plasma (ICP) source. The simulation results are compared to previously published experimental measurements with Langmuir probes, voltage and current monitors, optical emission spectroscopy, ion mass spectrometry, and gas quadrapole mass spectrometry. Furthermore, results from VIZGLOW are benchmarked against simulation results obtained from the Hybrid Plasma Equipment Model (HPEM). Results for experimentally measured process gases (Ar, Ar/O₂, Ar/O₂/H₂) at low pressures (< 15 mTorr), operating at 3-6 kW’s of input power, and varying rf frequency (400 kHz –13 MHz) are discussed.