Invited Paper MS+GR+MI-ThM9
Large Area, Continuous Single- and Few- Layer Graphene Films on Insulating Substrates

Thursday, November 12, 2009, 10:40 am, Room C3

Graphene has exceptional electronic, thermal and mechanical properties. For the realization of graphene-related applications, it is necessary to develop reliable and low cost fabrication methods of graphene-based structures, ideally on any substrates. In this talk I will present our method of fabricating large area (~cm²) films of single- to few-layer graphene and transferring the films to arbitrary substrates. The graphene films are synthesized by ambient pressure Chemical Vapor Deposition, consist of regions of 1 to ~10 graphene layers and have an average thickness of 2-3 nm. The structure of the graphene films are characterized with various methods, such as atomic force microscope, transmission electron microscope, scanning tunneling microscope and Raman. Detailed understanding in the growth mechanism provides guidance for improving the quality of the graphene films. The method presented in this work can potentially be scaled to industrial production of graphene films, for applications such as ultra-thin conductive and transparent electrodes, or devices and interconnect for integrated circuits.