| AVS 53rd International Symposium | |
| Surface Science | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | SS2-MoA1 Comparative Molecular Surface Functionalization of Silicon Surface Structures D.E. Barlow, S.C. Erwin, A.R. Laracuente, L.J. Whitman, J.N. Russell, Naval Research Laboratory |
| 2:20pm | SS2-MoA2 Adsorption of Ethanethiol, Ethanol, and Mercaptoethanol on Ge(100)-2x1 J.S. Kachian, S.F. Bent, Stanford University |
| 2:40pm | SS2-MoA3 Invited Paper The Cycloaddition of Organic Molecules to the Si(100)c(4x2) Surface: Microscopic Mechanism and Tunneling Properties of Single Molecules J. Yoshinobu, University of Tokyo, Japan |
| 3:20pm | SS2-MoA5 Passivation of Germanium and Silicon Surfaces with Oxide, Hydrogen, Chlorine, and Methyl S. Rivillon Amy, Y.J. Chabal, Rutgers University, F. Amy, A. Kahn, Princeton University |
| 3:40pm | SS2-MoA6 Photochemical Functionalization and Chemical Patterning of Gallium Nitride Thin Films with Biomolecular Layers H. Kim, P. Colavita, K. Metz, B.M. Nichols, B. Sun, J.J. Uhlrich, X. Wang, T.F. Kuech, R.J. Hamers, University of Wisconsin at Madison |
| 4:00pm | SS2-MoA7 Achieving a Low Surface Recombination Rate Despite a High Surface Defect Density: the Role of Charge Carrier Concentration D.J. Michalak, N.S. Lewis, California Institute of Technology |
| 4:20pm | SS2-MoA8 Reaction of Amino Acids on the Ge(100) Surface S.J. Jung, Korea Advanced Institute of Science and Technology (KAIST), J.S. Kachian, Stanford University, S. Kim, Korea Advanced Institute of Science and Technology (KAIST), S.F. Bent, Stanford University |