AVS 53rd International Symposium | |
Plasma Science and Technology | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:00am | PS2+TF-WeM1 Invited Paper Beam Activation for Atomic Layer Deposition of Ta-Based Barriers on Low-k Dielectric Surfaces P.S. Ho, The University of Texas at Austin, J. Liu, The University of Texas at Austin (presently: Tokyo Electron America Inc.), J. Bao, H. Shi, The University of Texas at Austin |
8:40am | PS2+TF-WeM3 PECVD Synthesis and Optimization of High @kappa@ Dielectric Structures W. Yang, M. Seman, C.A. Wolden, Colorado School of Mines |
9:00am | PS2+TF-WeM4 Tantalum Oxy-nitride Film Deposition by Electron Cyclotron Resonance Plasma Sputtering for MIM Capacitor T. Ono, H. Toyota, Hirosaki University, Japan, M. Shimada, Y. Jin, NTT MI Labs, Japan |
9:20am | PS2+TF-WeM5 In Situ Studies of Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Al@sub 2@O@sub 3@ S.B.S. Heil, P. Kudlacek, E. Langereis, R. Engeln, M.C.M. Van De Sanden, W.M.M. Kessels, Eindhoven University of Technology, The Netherlands |
9:40am | PS2+TF-WeM6 XPS Study of Plasma Pretreatment of PEN and Related Polymer Substrates to Enhance Atomic Layer Deposition of Aluminum Oxide E.S. Brandt, J.M. Grace, Eastman Kodak Company |
10:40am | PS2+TF-WeM9 The Use of Pulse-Shaped Substrate Bias for Energy-Selective Ion Bombardment During Amorphous Si Deposition I.T. Martin, M.A. Blauw, R. Engeln, W.M.M. Kessels, M.C.M. Van De Sanden, Eindhoven University of Technology, The Netherlands |
11:00am | PS2+TF-WeM10 Effects of Clusters and Higher-Order Silane Related Radicals on Stability of a-Si:H Films Deposited by Plasma CVD K. Koga, H. Miyahara, G. Yuan, A. Genot, S. Iwashita, W.M. Nakamura, M. Shiratani, Kyushu University, Japan |
11:20am | PS2+TF-WeM11 Methods of Producing Plasma Enhanced CVD Silicon Nitride Thin Films with High Compressive and Tensile Stress M.P. Belyansky, N. Klymko, A. Madan, M. Chace, S. Molis, P.A. Ronsheim, J. Kempisty, A. Mallikarjunan, Y. Li, IBM Microelectronics |
11:40am | PS2+TF-WeM12 Analyses of CH4/H2 RF Plasma and Iron Catalysts for Control of Carbon Nanotube Growth A. Okita, Y. Suda, A. Ozeki, Hokkaido University, Japan, A. Oda, Nagoya Institute of Technology, Japan, J. Nakamura, Tsukuba University, Japan, K. Bhattacharyya, H. Sugawara, Y. Sakai, Hokkaido University, Japan |
12:00pm | PS2+TF-WeM13 Increase of O(@super 1@D) Metastables by Rare-Gas Diluted O@sub 2@ Plasma and Application to the Oxide Growth T. Kitajima, T. Nakano, National Defense Academy of Japan, T. Makabe, Keio University, Japan |