AVS 53rd International Symposium
    Nanometer-scale Science and Technology Wednesday Sessions
       Session NS+NM-WeA

Paper NS+NM-WeA4
High-Density Gigabit Patterning of Sub-100nm Circular Hole/Dot Arrays by Nanoimprint Lithography

Wednesday, November 15, 2006, 3:00 pm, Room 2016

Session: Nanolithography and Patterning
Presenter: W. Hu, Stanford University
Authors: W. Hu, Stanford University
R.J. Wilson, Stanford University
L. Xu, Stanford University
S.J. Han, Stanford University
S.X. Wang, Stanford University
Correspondent: Click to Email
High throughput and cost-effective patterning of sub-100nm periodic features is of great interest for science and engineering. In this work we present results from patterning high-density arrays of circular holes with 100nm diameters at 300nm pitch, or with 50nm diameters at 100nm pitch, throughout an area of 1 square cm. We use 75K molecular weight polymethyl methacrylate (PMMA) resist and thermal nanoimprint lithography. Several issues are addressed which arise during patterning and characterization, such as pattern distortion control during debonding and PMMA damage induced by Au metallization for scanning electron microscopy (SEM). We further demonstrate the fabrication of dense gigabit magnetic nanodot arrays using PMMA and polymethyl glutarimide (PMGI) resist bi-layers and a lift-off process. Metal residuals with different shapes are found to be associated with variable resist processing, metallization, and lift-off conditions and are removed by an ion mill process. Additionally we show that the nanodot diameter can be tuned by using oxygen plasma ashing. Finally, the magnetic properties of nanodot arrays are shown to be readily characterized by alternating gradient magnetometry (AGM).