AVS 53rd International Symposium
    Nano-Manufacturing Topical Conference Tuesday Sessions
       Session NM-TuP

Paper NM-TuP5
Fabrication of Nanometer-scale Holes Based on a Plasma Ashing and Selective Liquid Phase Deposition

Tuesday, November 14, 2006, 6:00 pm, Room 3rd Floor Lobby

Session: Nano-Manufacturing Poster Session
Presenter: K.S Kim, Sungkyunkwan University, Republic of Korea
Authors: K.S Kim, Sungkyunkwan University, Republic of Korea
Y. Roh, Sungkyunkwan University, Republic of Korea
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The fabrication of nanometer-scale structures such as nano-dot, nano-wires, nano-pillars, nano-holes, etc. on single crystal semiconductor surface has recently attracted growing attention in the field of semiconductor device technologies. Such nano-fabrication is important not only for further advancement of conventional ULSI technologies but also for development of new-type devices such as quantum-effect ones. Particularly, nano-hole fabrication has been demonstrated by using advanced techniques such as nano-lithography using STM, atomic hydrogen etching and aluminum etching mask. However, these techniques have time consumption problem and require high production cost. Moreover, conventional deposition processes such as E-beam evaporation and sputtering have a thermal stress problem because of high process temperature. In this work, we have used plasma down stream ashing technique and selective liquid phase deposition. Using plasma down stream ashing and selective liquid phase deposition, we could fabricate the nanometer-scale pillar structures and nano-hole, respectively. Selective liquid phase deposition method is possible to deposit silicon dioxide under 50@degree@C without damaging the photoresist. We demonstrated less than 100 nm nano-holes and successfully reproduced in our experiment. These results may open the possibilities to fabricate the unique tools for the nanometer-scale diode, MOSFET, vertical-type field effect transistors and highly aligned emitters.