AVS 53rd International Symposium
    Nano-Manufacturing Topical Conference Wednesday Sessions
       Session NM+NS+NNT-WeM

Invited Paper NM+NS+NNT-WeM9
Metrology for Nanoimprint Technologies: Needs and Prospects

Wednesday, November 15, 2006, 10:40 am, Room 2018

Session: International Developments in Nanoimprint Lithography
Presenter: C.L. Soles, National Institute of Standards & Technology
Authors: C.L. Soles, National Institute of Standards & Technology
H.W. Ro, National Institute of Standards & Technology
Y. Ding, National Institute of Standards & Technology
H.J. Lee, National Institute of Standards & Technology
R.L. Jones, National Institute of Standards & Technology
A. Karim, National Institute of Standards & Technology
Correspondent: Click to Email

Nanoimprint is a next generation lithography candidate with enormous potential not just for the semiconductor industry, but also a wide range of emerging technologies. This is because nanoimprint combines a fine patterning resolution, comparable to e-beam lithography, with a high throughput and low cost tool. However, there are several aspects of the nanoimprint process that significantly differ from state of the art optical lithography currently used for high volume nanofabrication and these differences introduce new metrology challenges unique to the nanoimprint process. Equally as important, the potential increase in the pattering resolution of nanoimprint over current patterning technologies threatens to exacerbate many of the existing metrology challenges presently facing optical lithography. In this presentation we review the unique and the non-unique metrology challenges facing nanoimprint lithography. These metrology needs come from interactions with both industrial and academic practitioners of nanoimprint through international workshops and panel discussions. We will present an overview of the progress being made to meet these metrology needs. Specific examples from our own research in developing novel X-ray scattering and reflectivity measurements to facilitate the nanoimprint processes will be highlighted.