AVS 53rd International Symposium
    Nano-Manufacturing Topical Conference Monday Sessions
       Session NM+MS+IPF-MoA

Invited Paper NM+MS+IPF-MoA1
Technology Challenges: The Next 15 Years

Monday, November 13, 2006, 2:00 pm, Room 2018

Session: Beyond CMOS: Emerging Materials and Devices
Presenter: P. Gargini, Intel Corporation
Authors: P. Gargini, Intel Corporation
C.M. Garner, Intel Corporation
Correspondent: Click to Email
The semiconductor industry continues to introduce new technologies at the pace dictated by Moore’s Law. The International Technology Roadmap for Semiconductors (ITRS) projects that devices can be manufactured with conventional process technology through at least 2020 even though there are significant challenges, but further extensions to extreme CMOS may require new 1D device materials. When extreme CMOS technology has reached the limits of scaling, new devices with potentially new architecture will be needed to provide continued performance improvements. For technologies beyond CMOS, research is proceeding on a number of new alternate "state" devices that would require radical materials with a silicon base. The introduction of new alternate state devices may require the introduction of new interconnect technologies and materials with nm control of properties. The challenges to driving to extreme CMOS and the options for alternate state devices will be discussed. For more information on the International Technology Roadmap for Semiconductors (ITRS): http://public.itrs.net