AVS 53rd International Symposium
    Exhibitor Workshop Thursday Sessions
       Session EW-ThL

Paper EW-ThL2
Flexible 200 mm ALD Oxide, Nitride and Metal Processes

Thursday, November 16, 2006, 11:20 am, Room Exhibit Hall

Session: Exhibitor Workshop
Presenter: N. Singh, Oxford Instruments Plasma Technology, UK
Authors: N. Singh, Oxford Instruments Plasma Technology, UK
C. Hodson, Oxford Instruments Plasma Technology, UK
Correspondent: Click to Email
Al@sub 2@O@sub 3@, HfO@sub 2@, TiN and Ru films have been deposited in the Oxford Instruments flexible 200 mm ALD reactor. The effects of process parameters such as process temperature, precursor dosage and plasma power on film quality were investigated. Film thickness was obtained from nanospec measurements. XRD, AES, RBS techniques were used to characterize the stoichiometry, film structure and contamination levels. Four point probe was used to measure the resistivity of metallic films. TiN films deposited from TiCl@sub 4@ and N@sub 2@ / H@sub 2@ plasma showed self limiting behaviour at a deposition rate of 0.33Å/cycle. The resistivity at 350°C deposition temperature was < 170µ@ohm@cm. The chlorine impurity in TiN varied from 2.6% to 1.2% for plasma exposures of 3 sec and 5 sec respectively. Longer plasma exposures also lowered the resistivity values from 170 to 140µ@ohm@cm at 350°C deposition temperature. Hafnium Oxide films deposited from TEMAH and O@sub 2@ plasma showed saturation at a deposition rate of 1.1Å /cycle. The dielectric constant of the film was found to be ~20. The same film deposited thermally using H@sub 2@O as the oxidant saturated at 0.8Å/cycle and had a lower dielectric constant ~18. A compositional ratio of [O]/[Hf] 2.0 to 2.13 was obtained from RBS. The C content in plasma HfO@sub 2@ films was < 2%. Aluminum oxide films deposited from TMA and O@sub 2@ plasma showed self limiting behaviour at 1.2Å/cycle at 200°C. The total cycle time was < 5 sec with a 20 msec TMA pulse suffcient to provide self limiting ALD growth. Ruthenium (Ru) films deposited from Ru(EtCp)@sub 2@ and oxygen plasma showed self limiting behaviour at a deposition rate of 0.37Å/cycle on 100Å thick TiN layers. The film resistivity was < 20µ@ohm@cm at 350°C. The impurities (C, H, O) in the deposited films are < 2%. By varying the plasma conditions and oxygen composition, ruthenium oxide films can be deposited.