AVS 53rd International Symposium
    Electronic Materials and Processing Tuesday Sessions
       Session EM-TuM

Paper EM-TuM5
Low Resistivity Aluminum-Doped Zinc Oxide Grown by Atmospheric Plasma Enhanced Chemical Vapor Deposition

Tuesday, November 14, 2006, 9:20 am, Room 2003

Session: Zinc Oxide
Presenter: M.D. Barankin, University of California, Los Angeles
Authors: M.D. Barankin, University of California, Los Angeles
E. Gonzalez II, University of California, Los Angeles
A.M. Ladwig, University of California, Los Angeles
R.F. Hicks, University of California, Los Angeles
Correspondent: Click to Email
Zinc oxide is a promising material for the transparent conducting oxide in thin-film photovoltaic cells. Today there is a strong push towards low-cost photovoltaics that may be fabricated on flexible substrates in a roll-to-roll process. In this presentation we will demonstrate the low temperature growth of Al-doped ZnO using atmospheric pressure plasma deposition with diethyl zinc and carbon dioxide as the oxygen source. Films deposited at a substrate temperature of 225°C exhibited resistivities of 2â?¢10-3 @ohm@â?¢cm, with an average transparency to visible light of at least 90%. It was found that the resistivity decreased with increasing substrate temperature from 100 to 230°C and with decreasing diethyl zinc feed rate. Maximum growth rates were in the range of 50 - 100 nm/min. These results are in contrast to those obtained by thermal CVD of Al/ZnO using molecular oxygen and diethyl zinc. In this case a sheet resistance of 0.2 @ohm@â?¢cm was obtained for deposition at 225°C. The atmospheric pressure plasma deposition process is unique in its capability of generating transparent conductive zinc oxide at low temperature.